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semiconductor components industries, llc, 2016 publication order number: december, 2016, rev. 1.0 FDMS1D4N03S/d 1 FDMS1D4N03S n-channel powertrench ? syncfet tm www.onsemi.com 4 3 2 1 5 6 7 8 s s s g d d d d bottom top pin 1 s g s s d d d d power 56 FDMS1D4N03S n-channel powertrench ? syncfet tm 30 v, 211 a, 1.09 m features ? max r ds(on) = 1.09 m at v gs = 10 v, i d = 38 a ? max r ds(on) = 1.3 m at v gs = 4.5 v, i d = 35 a ? high performance technology for extremely low r ds(on) ? syncfet tm schottky body diode ? 100% uil tested ? rohs compliant general description the FDMS1D4N03S has been desi gned to minimize losses in power conversion application. ad vancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. this device has the added benefit of an efficient monolithic schottky body diode. applications ? synchronous rectifier for dc/dc converters ? notebook vcore/ gpu low side switch ? networking point of load low side switch ? telecom secondary sde rectification mosfet maximum ratings t a = 25 c unless otherwise noted. thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 16 v i d drain current -continuous t c = 25 c (note 5) 211 a -continuous t c = 100 c (note 5) 134 -continuous t a = 25 c (note 1a) 38 -pulsed (note 4) 1140 e as single pulse avalanche energy (note 3) 384 mj p d power dissipation t c = 25 c 74 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.7 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS1D4N03S FDMS1D4N03S power 56 13 ?? 12 mm 3000 units
www.onsemi.com 2 FDMS1D4N03S n-channel powertrench ? syncfet tm electrical characteristics t j = 25 c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 20 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 a i gss gate to source leakage current v gs = 16 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 1 ma 1 1.6 3 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c -4 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 38 a 0.8 1.09 m v gs = 4.5 v, i d = 35 a 1.0 1.3 v gs = 10 v, i d = 38 a, t j = 125 c 1.2 1.7 g fs forward transconductance v ds = 5 v, i d = 38 a 281 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 7320 10250 pf c oss output capacitance 1950 2730 pf c rss reverse transfer capacitance 101 180 pf r g gate resistance 0.1 0.5 1.5 t d(on) turn-on delay time v dd = 15 v, i d = 38 a, v gs = 10 v, r gen = 6 21 33 ns t r rise time 612ns t d(off) turn-off delay time 51 82 ns t f fall time 510ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 38 a 102 143 nc q g total gate charge v gs = 0 v to 4.5 v 46 65 nc q gs gate to source charge 18 nc q gd gate to drain ?miller? charge 9 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.7 1.2 v v gs = 0 v, i s = 38 a (note 2) 0.8 1.3 t rr reverse recovery time i f = 38 a, di/dt = 246 a/ s 44 70 ns q rr reverse recovery charge 70 112 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 384 mj is based on starting t j = 25 c, l = 3 mh, i as =16 a, v dd =30 v, v gs = 10 v. 100% tested at l = 0.1 mh, i as = 52 a. 4. pulse id please refer to fig.11 soa curve for detail. 5. computed continuous current limited to max junction temper ature only, actual continuous curr ent will be limited by thermal & electro-mechanical application board design 50 c/w when mounted on a 1 in 2 pad of 2 oz copper 125 c/w when mounted on a minimum pad of 2 oz copper. g df ds sf ss g df ds sf ss a) b)
www.onsemi.com 3 FDMS1D4N03S n-channel powertrench ? syncfet tm typical characteristics t j = 25 c unless otherwise noted. figure 1. 0.0 0.2 0.4 0.6 0 50 100 150 200 v gs = 3.5 v v gs = 10 v v gs = 4 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 3 v v gs = 4.5 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 40 80 120 160 200 0 1 2 3 v gs = 10 v v gs = 3 v v gs = 4 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4.5 v v gs = 3.5 v n o r m a l i z e d o n - r e s i s t a n c e vs. drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 i d = 38 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs. junction temperature figure 4. 0246810 0 2 4 6 8 t j = 125 o c i d = 38 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s . g a t e t o source voltage figure 5. transfer characteristics 12345 0 50 100 150 200 t j = 125 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 0.001 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs. source current
www.onsemi.com 4 FDMS1D4N03S n-channel powertrench ? syncfet tm figure 7. 0 20406080 0 2 4 6 i d = 38 a v dd = 20 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15 v gate charge characteristics figure 8. 0.1 1 10 30 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s . d r a i n to source voltage f i g u r e 9 . u n c l a m p e d i n d u c t i v e swit ching capability 0.001 0.01 0.1 1 10 100 1000 1 10 100 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) figure 10. 25 50 75 100 125 150 0 48 96 144 192 240 v gs = 4.5 v r t jc = 1.7 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs. case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 2000 100 p s 10 p s curve bent to measured data 10 ms 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t jc = 1.7 o c/w t c = 25 o c figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 10 2 10 3 10 4 10 5 single pulse r t jc = 1.7 o c/w t c = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted.
www.onsemi.com 5 FDMS1D4N03S n-channel powertrench ? syncfet tm figure 13. 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 2 single pulse duty cycle-descending order r(t), normalized effective transient thermal resistance t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 notes: z t jc (t) = r(t) x r t jc r t jc = 1.7 o c/w duty cycle, d = t 1 / t 2 peak t j = p dm x z t jc (t) + t c p dm t 1 t 2 junction-to-case transient thermal response curve typical characteristics t j = 25 c unless otherwise noted.
www.onsemi.com 6 FDMS1D4N03S n-channel powertrench ? syncfet tm syncfet tm schottky body diode characteristics fairchild?s syncfet tm process embeds a schottky diode in parallel with powertrench mosfet . this diode exhibits similar characteristics to a discrete exte rnal schottky diode in parallel with a mosfet. figure 14 shows the reverse recovery characteristic of the FDMS1D4N03S. schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. this will increase the power in the device. 0 100 200 300 400 500 -5 0 5 10 15 20 25 30 35 40 di/dt = 246 a/ s current (a) time (ns) 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) typical characteristics (continued) figure 14. FDMS1D4N03S syncfet tm body diode reverse recovery characteristic figure 15. syncfet tm body diode reverse leakage vs. drain-source voltage
c l l c pkg pkg 5.10 6.15 top view side view 1 4 8 5 a b notes: unless otherwise specified a. package standard reference: jedec mo-240, issue a, var. aa,. b. dimensions do not include burrs or mold flash. mold flash or burrs does not exceed 0.10mm. c. all dimensions are in millimeters. d. dimensioning and tolerancing per asme y14.5m-2009. e. it is recommended to have no traces or vias within the keep out area. 5.85 5.65 5.00 4.80 optional draft angle may appear on four sides of the package (0.50) (0.52) see detail c bottom view ? ? 0.35 0.15 c seating plane detail c scale: 2:1 0.05 0.00 1 2 3 4 8 7 6 5 0.76 0.51 0.51 0.31 (8x) 3.81 ? ? 0.35 0.15 0.30 0.05 see detail b detail b scale: 2:1 (0.34) 1.27 0.10 c a b 3.96 3.61 3.48 +0.30 -0.10 ? 0.08 c 0.10 c 1.10 0.90 8x (0.30) (2x) 1.27 3.81 1.27 6.61 3.91 4.52 1.27 1 2 3 4 8 5 6 7 land pattern recommendation 0.77 0.61 keep out area 5.10 3.75 0.20 +0.10 -0.15 (8x) 6.25 5.90 5.20 4.80 pqfn8 5x6, 1.27p case 483ae issue a
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc
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